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NTMSD2P102LR2
4
5
V GS = ?2.1 V
T J = 25 ° C
V DS > = ?10 V
3
V GS = ?10 V
V GS = ?4.5 V
V GS = ?2.5 V
V GS = ?1.9 V
4
3
2
1
V GS = ?1.7 V
2
T J = 25 ° C
0
V GS = ?1.5 V
1
0
T J = 100 ° C
T J = 55 ° C
0
2
4
6
8
10
1
1.5
2
2.5
3
?V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 1. On?Region Characteristics.
?V GS , GATE?TO?SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics.
0.2
0.15
T J = 25 ° C
0.12
0.1
T J = 25 ° C
V GS = ?2.7 V
0.1
0.05
0
0.08
0.06
0.04
V GS = ?4.5 V
2
4
6
8
1
1.5
2
2.5
3
3.5
4
4.5
1.6
?V GS, GATE?TO?SOURCE VOLTAGE (VOLTS)
Figure 3. On?Resistance vs. Gate?to?Source
Voltage.
1000
?I D, DRAIN CURRENT (AMPS)
Figure 4. On?Resistance vs. Drain Current and
Gate Voltage.
1.4
I D = ?2.4 A
V GS = ?4.5 V
100
V GS = 0 V
T J = 125 ° C
T J = 100 ° C
1.2
1
0.8
0.6
10
1
0.1
0.01
T J = 25 ° C
?50
?25
0 25
50
75
100
125
150
0
4 8 12 16
20
T J, JUNCTION TEMPERATURE ( ° C)
Figure 5. On?Resistance Variation with
Temperature.
http://onsemi.com
4
?V DS, DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 6. Drain?to?Source Leakage Current
vs. Voltage.
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